VLSI/test1
VLSI: semiconductor device and process simulation
| Name |
test1 |
| Group |
VLSI |
| Matrix ID |
2840 |
|
Num Rows
|
392,908 |
|
Num Cols
|
392,908 |
|
Nonzeros
|
9,447,535 |
|
Pattern Entries
|
12,968,200 |
|
Kind
|
Semiconductor Device Problem |
|
Symmetric
|
No |
|
Date
|
2018 |
|
Author
|
Anonymous |
|
Editor
|
T. Davis |
| Structural Rank |
392,908 |
| Structural Rank Full |
true |
|
Num Dmperm Blocks
|
10,210 |
|
Strongly Connect Components
|
10,210 |
|
Num Explicit Zeros
|
3,520,665 |
|
Pattern Symmetry
|
100% |
|
Numeric Symmetry
|
26.5% |
|
Cholesky Candidate
|
no |
|
Positive Definite
|
no |
|
Type
|
real |
| Download |
MATLAB
Rutherford Boeing
Matrix Market
|
| Notes |
VLSI: semiconductor device and process simulation
Process and Device Simulation matrices: nv1 and nv2 are very ill-conditioned.
Device simulation matrices in this set:
nv1, nv2, imagesensor, mosfet2, power9, radiation, test1, dgreen
Process simulation matrices in this set:
vas_stokes_1M, vas_stokes_2M, vas_stokes_4M, stokes, ss1, ss
Source: these are real matrices from industry. The submittor
requested that their name and company be withheld.
|
