VLSI/ss1
VLSI: semiconductor device and process simulation
Name |
ss1 |
Group |
VLSI |
Matrix ID |
2846 |
Num Rows
|
205,282 |
Num Cols
|
205,282 |
Nonzeros
|
845,089 |
Pattern Entries
|
845,089 |
Kind
|
Semiconductor Process Problem |
Symmetric
|
No |
Date
|
2018 |
Author
|
Anonymous |
Editor
|
T. Davis |
Structural Rank |
205,282 |
Structural Rank Full |
true |
Num Dmperm Blocks
|
95,977 |
Strongly Connect Components
|
95,977 |
Num Explicit Zeros
|
0 |
Pattern Symmetry
|
99.4% |
Numeric Symmetry
|
4.2% |
Cholesky Candidate
|
no |
Positive Definite
|
no |
Type
|
real |
Download |
MATLAB
Rutherford Boeing
Matrix Market
|
Notes |
VLSI: semiconductor device and process simulation
Process and Device Simulation matrices: nv1 and nv2 are very ill-conditioned.
Device simulation matrices in this set:
nv1, nv2, imagesensor, mosfet2, power9, radiation, test1, dgreen
Process simulation matrices in this set:
vas_stokes_1M, vas_stokes_2M, vas_stokes_4M, stokes, ss1, ss
Source: these are real matrices from industry. The submittor
requested that their name and company be withheld.
|