VLSI/radiation
VLSI: semiconductor device and process simulation
Name |
radiation |
Group |
VLSI |
Matrix ID |
2839 |
Num Rows
|
223,104 |
Num Cols
|
223,104 |
Nonzeros
|
5,526,637 |
Pattern Entries
|
7,637,688 |
Kind
|
Semiconductor Device Problem |
Symmetric
|
No |
Date
|
2018 |
Author
|
Anonymous |
Editor
|
T. Davis |
Structural Rank |
223,104 |
Structural Rank Full |
true |
Num Dmperm Blocks
|
2,392 |
Strongly Connect Components
|
2,392 |
Num Explicit Zeros
|
2,111,051 |
Pattern Symmetry
|
100% |
Numeric Symmetry
|
18.9% |
Cholesky Candidate
|
no |
Positive Definite
|
no |
Type
|
real |
Download |
MATLAB
Rutherford Boeing
Matrix Market
|
Notes |
VLSI: semiconductor device and process simulation
Process and Device Simulation matrices: nv1 and nv2 are very ill-conditioned.
Device simulation matrices in this set:
nv1, nv2, imagesensor, mosfet2, power9, radiation, test1, dgreen
Process simulation matrices in this set:
vas_stokes_1M, vas_stokes_2M, vas_stokes_4M, stokes, ss1, ss
Source: these are real matrices from industry. The submittor
requested that their name and company be withheld.
|