VLSI/power9
VLSI: semiconductor device and process simulation
| Name |
power9 |
| Group |
VLSI |
| Matrix ID |
2838 |
|
Num Rows
|
155,376 |
|
Num Cols
|
155,376 |
|
Nonzeros
|
1,887,730 |
|
Pattern Entries
|
2,512,300 |
|
Kind
|
Semiconductor Device Problem |
|
Symmetric
|
No |
|
Date
|
2018 |
|
Author
|
Anonymous |
|
Editor
|
T. Davis |
| Structural Rank |
155,376 |
| Structural Rank Full |
true |
|
Num Dmperm Blocks
|
3,121 |
|
Strongly Connect Components
|
3,121 |
|
Num Explicit Zeros
|
624,570 |
|
Pattern Symmetry
|
100% |
|
Numeric Symmetry
|
30.2% |
|
Cholesky Candidate
|
no |
|
Positive Definite
|
no |
|
Type
|
real |
| Download |
MATLAB
Rutherford Boeing
Matrix Market
|
| Notes |
VLSI: semiconductor device and process simulation
Process and Device Simulation matrices: nv1 and nv2 are very ill-conditioned.
Device simulation matrices in this set:
nv1, nv2, imagesensor, mosfet2, power9, radiation, test1, dgreen
Process simulation matrices in this set:
vas_stokes_1M, vas_stokes_2M, vas_stokes_4M, stokes, ss1, ss
Source: these are real matrices from industry. The submittor
requested that their name and company be withheld.
|
